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2007-08-30 rev. 2.6 page 1 spp11n60cfd cool mos? power transistor v ds @ t jmax 650 v r ds(on) 0.44 ? i d 11 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? high peak current capability ? intrinsic fast-recovery body diode ? extreme low reverse recovery charge pg-to220 type package ordering code spp11n60cfd pg-to220 q67040-s4618 marking 11n60cfd maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 11 7 a pulsed drain current, t p limited by t jmax i d puls 28 avalanche energy, single pulse i d = 5.5 a, v dd = 50 v e as 340 mj avalanche energy, repetitive t ar limited by t jmax 1) i d = 11 a, v dd = 50 v e ar 0.6 avalanche current, repetitive t ar limited by t jmax i ar 11 a reverse diode d v /d t i s =11a, v ds =480v, t j =125c d v /d t 40 v/ns gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 125 w operating and storage temperature t j , t stg -55... +150 c
2007-08-30 rev. 2.6 page 2 spp11n60cfd maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 11 a, t j = 125 c d v /d t 80 v/ns maximum diode commutation speed v ds = 480 v, i d = 11 a, t j = 125 c d i f /d t 600 a/s thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 1 k/w thermal resistance, junction - ambient, leaded r thja - - 62 soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 600 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =11a - 700 - gate threshold voltage v gs(th) i d =500 ? v gs = v ds 3 4 5 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - 1.1 900 - - a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =7a, t j =25c t j =150c - - 0.38 1.02 0.44 - ? r g f =1mhz, open drain - 0.86 -
2007-08-30 rev. 2.6 page 3 spp11n60cfd electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. transconductance g fs v ds i d * r ds(on)max , i d =7a - 8.3 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1200 - pf output capacitance c oss - 390 - reverse transfer capacitance c rss - 30 - effective output capacitance, 2) energy related c o(er) v gs =0v, v ds =0v to 480v - 45 - pf effective output capacitance, 3) time related c o(tr) - 85 - turn-on delay time t d(on) v dd =380v, v gs =0/10v, i d =11a, r g =6.8 ? t r - 18 - turn-off delay time t d(off) - 43 - fall time t f - 7 - gate charge characteristics gate to source charge q gs v dd =480v, i d =11a - 9 - nc gate to drain charge q gd - 23 - gate charge total q g v dd =480v, i d =11a, v gs =0 to 10v - 48 64 gate plateau voltage v (p lateau ) v dd =480v, i d =11a - 7 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 3 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
2007-08-30 rev. 2.6 page 4 spp11n60cfd electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 11 a inverse diode direct current, pulsed i sm - - 28 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =480v, i f = i s , d i f /d t =100a/s - 140 - ns reverse recovery charge q rr - 0.7 - c peak reverse recovery current i rrm - 11 - a peak rate of fall of reverse recovery current di rr / dt - 1200 - a/s typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.015 k/w r th2 0.03 r th3 0.056 r th4 0.197 r th5 0.216 r th6 0.083 thermal capacitance c th1 0.0001878 ws/k c th2 0.0007106 c th3 0.000988 c th4 0.002791 c th5 0.007285 c th6 0.063 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2007-08-30 rev. 2.6 page 5 spp11n60cfd 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 w 140 spp11n60cfd p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp=0.001 ms tp=0.01 ms tp=0.1 ms tp=1 ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 26 v ds 0 5 10 15 20 25 30 a 40 i d vgs = 20v vgs = 10v vgs = 9v vgs = 8.5v vgs = 8v vgs = 7.5v vgs = 7v vgs = 6.5v vgs = 6v
2007-08-30 rev. 2.6 page 6 spp11n60cfd 5 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 26 v ds 0 2 4 6 8 10 12 14 16 18 a 22 i d vgs = 20v vgs = 8.5v vgs = 8v vgs = 7.5v vgs = 7v vgs = 6.5v vgs = 6v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 4 8 12 16 20 a 28 i d 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 ? r ds(on) vgs = 6v vgs = 6.5v vgs = 7v vgs = 7.5v vgs = 8v vgs = 8.5v vgs = 20v 7 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 7 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 ? r ds(on) typ 98% 8 typ. transfer characteristics i d = f ( v gs ); v ds i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 8 10 12 14 16 v 20 v gs 0 5 10 15 20 25 30 a 40 i d tj = 150?c tj = 25?c
2007-08-30 rev. 2.6 page 7 spp11n60cfd 9 typ. gate charge v gs = f ( q gate ) parameter: i d = 11 a pulsed 0 10 20 30 40 50 nc 70 q gate 0 2 4 6 8 10 12 v 16 spp11n60cfd v gs 0.2 v ds max 0.8 v ds max 10 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spp11n60cfd i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 avalanche soa i ar = f ( t ar ) par.: t j t ar 0 1 2 3 4 5 6 7 8 9 a 11 i ar t j (start) =125c t j (start) =25c 12 avalanche energy e as = f ( t j ) par.: i d = 5.5 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 50 100 150 200 250 mj 350 e as
2007-08-30 rev. 2.6 page 8 spp11n60cfd 13 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 spp11n60cfd v (br)dss 14 avalanche power losses p ar = f ( f ) parameter: e ar =0.6mj 10 4 10 5 10 6 hz f 0 50 100 150 200 w 300 p ar 15 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 v 600 v ds 0 10 1 10 2 10 3 10 4 10 pf c c iss c oss c rss 16 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 v 600 v ds 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 j 7.5 e oss
2007-08-30 rev. 2.6 page 9 spp11n60cfd 17 typ. reverse recovery charge q rr = f( t j ) parameter: i d = 11a 25 50 75 c 125 t j 600 700 800 900 1000 1100 1200 q rr [nc] 18 typ. reverse recovery charge q rr = f( i d ) parameter: di/dt = 100 a/ 1100 1200 q rr [nc] tj = 25c tj = 125c 19 typ. reverse recovery charge q rr = f( di/dt ) parameter: i d = 11 a 100 200 300 400 500 600 700 a/s 900 d i /d t 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 q rr [nc] tj = 125c tj = 25c
2007-08-30 rev. 2.6 page 10 spp11n60cfd definition of diodes switching characteristics
2007 -08-30 rev. 2.6 page 11 spp11n60cfd pg-to-220-3-1, pg-to220-3-21
2007-08-30 rev. 2.6 page 12 spp11n60cfd published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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